Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer
Crossref DOI link: https://doi.org/10.1134/S1063785018050218
Published Online: 2018-06-22
Published Print: 2018-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mikhailovich, S. V.
Pavlov, A. Yu.
Tomosh, K. N.
Fedorov, Yu. V.
Text and Data Mining valid from 2018-05-01
Version of Record valid from 2018-05-01
Article History
Received: 29 January 2018
First Online: 22 June 2018