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The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas

Crossref DOI link: https://doi.org/10.1134/S1063785018070106

Published Online: 2018-08-16

Published Print: 2018-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Lundin, V. V.

Sakharov, A. V.

Zavarin, E. E.

Zakgeim, D. A.

Nikolaev, A. E.

Brunkov, P. N.

Yagovkina, M. A.

Tsatsul’nikov, A. F.
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Article History

Received: 28 March 2018

First Online: 16 August 2018

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