The Optical Properties, Energy Band Structure, and Interfacial Conductance of a 3C-SiC(111)/Si(111) Heterostructure Grown by the Method of Atomic Substitution
Crossref DOI link: https://doi.org/10.1134/S1063785020110243
Published Online: 2020-12-14
Published Print: 2020-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kukushkin, S. A.
Osipov, A. V.
Text and Data Mining valid from 2020-11-01
Version of Record valid from 2020-11-01
Article History
Received: 29 June 2014
Revised: 29 June 2020
Accepted: 26 July 2020
First Online: 14 December 2020
CONFLICT OF INTEREST
: The authors declare that they have no conflict of interest.