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Effect of the AlGaAs Seed Layer Composition on Antiphase Domains Formation in (Al)GaAs Structures Grown by Vapor-Phase Epitaxy on Ge/Si(100) Substrates

Crossref DOI link: https://doi.org/10.1134/S1063785021040283

Published Online: 2021-12-14

Published Print: 2021-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Rykov, A. V.

Kryukov, R. N.

Samartsev, I. V.

Yunin, P. A.

Shengurov, V. G.

Zaitsev, A. V.

Baidus’, N. V.
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Article History

Received: 23 December 2020

Revised: 13 January 2021

Accepted: 17 January 2021

First Online: 14 December 2021

CONFLICT OF INTEREST

: The authors declare that they have no conflicts of interest.

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