Spintronic Properties of the Interface between Si(111) and 3C–SiC(111) Grown by the Method of Coordinated Substitution of Atoms
Crossref DOI link: https://doi.org/10.1134/S1063785022090036
Published Online: 2023-02-09
Published Print: 2022-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kukushkin, S. A.
Osipov, A. V.
Osipova, E. V.
Text and Data Mining valid from 2022-08-01
Version of Record valid from 2022-08-01
Article History
Received: 13 July 2022
Revised: 13 July 2022
Accepted: 5 September 2022
First Online: 9 February 2023
CONFLICT OF INTEREST
: The authors declare that they have no conflicts of interest.