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Deposition of heteroepitaxial layers of topological insulator Bi2Se3 in the trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al2O3 and (100) GaAs substrates

Crossref DOI link: https://doi.org/10.1134/S1064226916010083

Published Online: 2016-03-23

Published Print: 2016-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Kuznetsov, P. I.

Luzanov, V. A.

Yakusheva, G. G.

Temiryazev, A. G.

Shchamkhalova, B. S.

Zhitov, V. A.

Zakharov, L. Yu.
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