Influence of parameters of the semiconductor–dielectric interface on the current of the guard ring of silicon photodiodes
Crossref DOI link: https://doi.org/10.1134/S1064226916030074
Published Online: 2016-04-05
Published Print: 2016-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Demidov, S. S.
Klimanov, E. A.
Text and Data Mining valid from 2016-03-01
