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320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer

Crossref DOI link: https://doi.org/10.1134/S1064226916030219

Published Online: 2016-04-05

Published Print: 2016-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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