Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCd x Te (x = 0.22–0.23) with the Al2O3 Insulator
Crossref DOI link: https://doi.org/10.1134/S106422691803021X
Published Online: 2018-03-27
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Voitsekhovskii, A. V.
Nesmelov, S. N.
Dzyadukh, S. M.
Vasil’ev, V. V.
Varavin, V. S.
Dvoretsky, S. A.
Mikhailov, N. N.
Yakushev, M. V.
Sidorov, G. Yu.
Text and Data Mining valid from 2018-03-01
Article History
Received: 8 June 2016
First Online: 27 March 2018