Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm
Crossref DOI link: https://doi.org/10.1134/S1064226919030021
Published Online: 2019-06-03
Published Print: 2019-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Boltar, K. O.
Irodov, N. A.
Sednev, M. V.
Marmalyuk, A. A.
Ladugin, M. A.
Ryaboshtan, Yu. L.
Text and Data Mining valid from 2019-03-01
Version of Record valid from 2019-03-01
Article History
Received: 28 November 2017
Revised: 28 November 2017
Accepted: 21 December 2017
First Online: 3 June 2019