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Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy

Published Online: 2019-06-03

Published Print: 2019-03

Authors

Voitsekhovskii, A. V.

Nesmelov, S. N.

Dzyadukh, S. M.

Dvoretsky, S. A.

Mikhailov, N. N.

Sidorov, G. Yu.

Yakushev, M. V.
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Text and Data Mining valid from 2019-03-01

Version of Record valid from 2019-03-01
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Article History

Received: 29 May 2018

Revised: 16 June 2018

Accepted: 21 June 2018

First Online: 3 June 2019

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