Atomic layer deposition of tantalum oxide with controlled oxygen deficiency for making resistive memory structures
Crossref DOI link: https://doi.org/10.1134/S1070427216110136
Published Online: 2017-02-24
Published Print: 2016-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Egorov, K. V.
Kuz’michev, D. S.
Lebedinskii, Yu. Yu.
Markeev, A. M.
License valid from 2016-11-01