Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms
Crossref DOI link: https://doi.org/10.1134/S1995078015020147
Published Online: 2015-05-03
Published Print: 2015-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Novikov, P. L.
Nenashev, A. V.
Rudin, S. A.
Polyakov, A. S.
Dvurechenskii, A. V.
Text and Data Mining valid from 2015-03-01