Siloxane Composition for the Passivation of p–n Junctions of High-Voltage Semiconductor Devices
Crossref DOI link: https://doi.org/10.1134/S1995421218020120
Published Online: 2018-05-11
Published Print: 2018-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Neelova, O. V.
Text and Data Mining valid from 2018-04-01
Article History
Received: 16 June 2017
First Online: 11 May 2018