Study of Linear Light Edge-Emitting Diodes Based on InP/InGaAsP/InP Heterostructure with the Crescent Active Region
Crossref DOI link: https://doi.org/10.1134/S2075113318050295
Published Online: 2018-10-12
Published Print: 2018-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Vasil’ev, M. G.
Vasil’ev, A. M.
Kostin, Yu. O.
Shelyakin, A. A.
Izotov, A. D.
Text and Data Mining valid from 2018-09-01
Article History
Received: 11 September 2017
First Online: 12 October 2018