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Article History

Received: 1 December 2020

Revised: 1 December 2020

Accepted: 11 February 2021

First Online: 12 May 2022

ADDITIONAL INFORMATION

: A more detailed description of the development and design of individual units of microcircuits with technological norms (TL) in the range of 1.0–5.0 nm is given in the plenary report of Academician of the Russian Academy of Sciences, General Director of JSC Research Institute of Molecular Electronics G. Ya. Krasnikov “Possibilities of microelectronic technologies with topological dimensions less than 5 nm” at the 5th International Forum “Microelectronics 2020”, Republic of Crimea, Yalta, 27.09–03.10.2020. The video recording is posted on the website of  JSC Research Institute of Molecular Electronics: ExternalRef removed.

: A detailed description of the design of devices and the physics of their work in the “Beyond CMOS” direction is given in the plenary report of Academician of the Russian Academy of Sciences, Head of the Department of Quantum Physics and Nanoelectronics at the National Research University “MIET”, Chief Researcher of the Physical Institute of the Russian Academy of Sciences A. A. Gorbatsevich “Quantum solutions to reduce the power consumption of logic circuits” at the 5th International Forum “Microelectronics 2020”, Republic of Crimea, Yalta, 27.09–03.10.2020. A brief listing of the possibilities of quantum technologies in microelectronics from the report of A. A. Gorbatsevich is given at ExternalRef removed

: These reports, as all reports of the 5th International Forum “Microelectronics 2020”, were published in a special issue of the “Nanoindustry” journal for 2021.