Transistors with High Electron Mobility Based on Gallium-Nitride Heterostructures for Millimeter Wavelengths
Crossref DOI link: https://doi.org/10.1134/S2635167622060040
Published Online: 2023-03-02
Published Print: 2022-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ezubchenko, I. S.
Kolobkova, E. M.
Andreev, A. A.
Chernykh, M. Ya.
Grishchenko, Yu. V.
Perminov, P. A.
Chernykh, I. A.
Zanaveskin, M. L.
Text and Data Mining valid from 2022-12-01
Version of Record valid from 2022-12-01
Article History
Received: 12 May 2022
Revised: 12 May 2022
Accepted: 28 May 2022
First Online: 2 March 2023