Microstructure and Formation Mechanism of V-Defects in the InGaN/GaN Multiple Quantum Wells with a High In Content
Crossref DOI link: https://doi.org/10.1134/S0021364020150035
Published Online: 2020-10-08
Published Print: 2020-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, H.
Tan, Q.
He, X.
Text and Data Mining valid from 2020-08-01
Version of Record valid from 2020-08-01
Article History
Received: 2 June 2020
Revised: 19 June 2020
Accepted: 19 June 2020
First Online: 8 October 2020