On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing
Crossref DOI link: https://doi.org/10.1134/S1027451021030319
Published Online: 2021-06-25
Published Print: 2021-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rysbaev, A. S.
Normurodov, M. T.
Khujaniyozov, J. B.
Rysbaev, A. A.
Normurodov, D. A.
Text and Data Mining valid from 2021-05-01
Version of Record valid from 2021-05-01
Article History
Received: 24 September 2020
Revised: 22 December 2020
Accepted: 27 December 2020
First Online: 25 June 2021