Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron
Crossref DOI link: https://doi.org/10.1134/S1063739718080097
Published Online: 2019-03-20
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rusak, T. F.
Enisherlova, K. L.
Lutzau, A. V.
Saraykin, V. V.
Korneev, V. I.
Text and Data Mining valid from 2018-12-01
Article History
Received: 3 February 2018
First Online: 20 March 2019