The Effect of Defects with Deep Levels on the C–V Characteristics of High-Power AlGaN/GaN/SiC HEMTs
Crossref DOI link: https://doi.org/10.1134/S1063739719010049
Published Online: 2019-04-22
Published Print: 2019-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Enisherlova, K. L.
Kolkovskii, Yu. V.
Bobrova, E. A.
Temper, E. M.
Kapilin, S. A.
Text and Data Mining valid from 2019-01-01
Article History
Received: 9 June 2018
First Online: 22 April 2019