Modeling the CMOS Characteristics of a Completely Depleted Surrounding-Gate Nanotransistor and an Unevenly Doped Working Region
Crossref DOI link: https://doi.org/10.1134/S1063739719060052
Published Online: 2020-01-14
Published Print: 2019-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Masal’skii, N. V.
Text and Data Mining valid from 2019-11-01
Version of Record valid from 2019-11-01
Article History
Received: 15 January 2019
Revised: 15 May 2019
Accepted: 15 May 2019
First Online: 14 January 2020