Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional Crystal
Crossref DOI link: https://doi.org/10.1134/S1063739720070069
Published Online: 2021-01-27
Published Print: 2020-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Makovskaya, T. I.
Danilyuk, A. L.
Krivosheeva, A. V.
Shaposhnikov, V. L.
Borisenko, V. E.
Text and Data Mining valid from 2020-12-01
Version of Record valid from 2020-12-01
Article History
Received: 18 July 2018
Revised: 18 October 2018
Accepted: 22 January 2019
First Online: 27 January 2021