Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics of n-InSe/p-InSe heterojunctions
Crossref DOI link: https://doi.org/10.1134/S1063782614040149
Published Online: 2014-04-17
Published Print: 2014-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Khandozhko, V. A.
Kudrynskyi, Z. R.
Kovalyuk, Z. D.
Text and Data Mining valid from 2014-04-01