Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
Crossref DOI link: https://doi.org/10.1134/S1063782614040204
Published Online: 2014-04-17
Published Print: 2014-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mahajan, A. M.
Khairnar, A. G.
Thibeault, B. J.
Text and Data Mining valid from 2014-04-01