Decrease in the binding energy of donors in heavily doped GaN:Si layers
Crossref DOI link: https://doi.org/10.1134/S1063782614090176
Published Online: 2014-08-31
Published Print: 2014-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Osinnykh, I. V.
Zhuravlev, K. S.
Malin, T. V.
Ber, B. Ya.
Kazantsev, D. Yu.
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