Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru
Crossref DOI link: https://doi.org/10.1134/S1063782614120203
Published Online: 2014-12-02
Published Print: 2014-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Romaka, V. A.
Rogl, P.
Romaka, V. V.
Stadnyk, Yu. V.
Korzh, R. O.
Krayovskyy, V. Ya.
Horyn, A. M.
Text and Data Mining valid from 2014-12-01