Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped
Crossref DOI link: https://doi.org/10.1134/S1063782615030185
Published Online: 2015-03-04
Published Print: 2015-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Romaka, V. A.
Rogl, P.
Romaka, V. V.
Kaczorowski, D.
Stadnyk, Yu. V.
Korzh, R. O.
Krayovskyy, V. Ya.
Kovbasyuk, T. M.
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