Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents
Crossref DOI link: https://doi.org/10.1134/S1063782615060226
Published Online: 2015-06-07
Published Print: 2015-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shabelnikova, Ya. L.
Yakimov, E. B.
Nikolaev, D. P.
Chukalina, M. V.
Text and Data Mining valid from 2015-06-01