Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC p+ānāān+ diodes at low temperatures (77 K)
Crossref DOI link: https://doi.org/10.1134/S1063782615070118
Published Online: 2015-07-01
Published Print: 2015-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ivanov, P. A.
Potapov, A. S.
Samsonova, T. P.
Text and Data Mining valid from 2015-07-01