Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
Crossref DOI link: https://doi.org/10.1134/S1063782615110263
Published Online: 2015-11-04
Published Print: 2015-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yurasov, D. V.
Bobrov, A. I.
Daniltsev, V. M.
Novikov, A. V.
Pavlov, D. A.
Skorokhodov, E. V.
Shaleev, M. V.
Yunin, P. A.
Text and Data Mining valid from 2015-11-01