Epitaxially Grown Monoisotopic Si, Ge, and Si1–x Ge x Alloy Layers: Production and Some Properties
Crossref DOI link: https://doi.org/10.1134/S1063782616030064
Published Online: 2016-03-31
Published Print: 2016-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Detochenko, A. P.
Denisov, S. A.
Drozdov, M. N.
Mashin, A. I.
Gavva, V. A.
Bulanov, A. D.
Nezhdanov, A. V.
Ezhevskii, A. A.
Stepikhova, M. V.
Chalkov, V. Yu.
Trushin, V. N.
Shengurov, D. V.
Shengurov, V. G.
Abrosimov, N. V.
Riemann, H.
Text and Data Mining valid from 2016-03-01