Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons
Crossref DOI link: https://doi.org/10.1134/S1063782616100122
Published Online: 2016-10-11
Published Print: 2016-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Emtsev, V. V.
Abrosimov, N. V.
Kozlovskii, V. V.
Oganesyan, G. A.
Poloskin, D. S.
License valid from 2016-10-01