Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn
Crossref DOI link: https://doi.org/10.1134/S1063782616110129
Published Online: 2016-11-06
Published Print: 2016-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kalentyeva, I. L.
Vikhrova, O. V.
Danilov, Yu. A.
Zvonkov, B. N.
Kudrin, A. V.
Drozdov, M. N.
License valid from 2016-11-01