Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method
Crossref DOI link: https://doi.org/10.1134/S1063782618100020
Published Online: 2018-09-06
Published Print: 2018-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Belolipetskiy, A. V.
Nestoklon, M. O.
Yassievich, I. N.
Text and Data Mining valid from 2018-09-06
Article History
Received: 12 March 2018
First Online: 6 September 2018