Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy
Crossref DOI link: https://doi.org/10.1134/S1063782618120175
Published Online: 2018-11-07
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mizerov, A. M.
Timoshnev, S. N.
Sobolev, M. S.
Nikitina, E. V.
Shubina, K. Yu.
Berezovskaia, T. N.
Shtrom, I. V.
Bouravleuv, A. D.
Text and Data Mining valid from 2018-11-07
Article History
Received: 25 April 2018
Accepted: 7 May 2018
First Online: 7 November 2018