Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films
Crossref DOI link: https://doi.org/10.1134/S1063782618130055
Published Online: 2018-12-24
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Feklistov, K. V.
Cherkov, A. G.
Popov, V. P.
Fedina, L. I.
Text and Data Mining valid from 2018-12-01
Article History
Received: 4 April 2017
Accepted: 2 April 2018
First Online: 24 December 2018