A Novel 4H-SiC Super Junction UMOSFET with Hetero-Junction Diode for Enhanced Reverse Recovery Characteristics and Low Switching Loss
Crossref DOI link: https://doi.org/10.1134/S1063782620050061
Published Online: 2020-05-09
Published Print: 2020-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, J.
Kim, K.
Text and Data Mining valid from 2020-05-01
Version of Record valid from 2020-05-01
Article History
Received: 9 January 2020
Revised: 21 January 2020
Accepted: 21 January 2020
First Online: 9 May 2020
CONFLICT OF INTEREST
: The authors declare that they have no conflict of interest.