Optimization of the Buffer Dielectric Layer for the Creation of Low-Defect Epitaxial Films of the Topological Insulator Pb1–xSnxTe with x ≥ 0.4
Crossref DOI link: https://doi.org/10.1134/S1063782623070114
Published Online: 2024-03-13
Published Print: 2023-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kaveev, A. K.
Tereshchenko, O. E.
Text and Data Mining valid from 2023-05-01
Version of Record valid from 2023-05-01
Article History
Received: 2 March 2022
Revised: 25 March 2022
Accepted: 25 March 2022
First Online: 13 March 2024
CONFLICT OF INTEREST
: The authors declare that they have no conflict of interest.