Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels
Crossref DOI link: https://doi.org/10.1134/S1063783415040046
Published Online: 2015-04-16
Published Print: 2015-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Agekyan, V. F.
Borisov, E. V.
Vorobjev, L. E.
Melentyev, G. A.
Nykänen, H.
Riuttanen, L.
Serov, A. Yu.
Suihkonen, S.
Svensk, O.
Filisofov, N. G.
Shalygin, V. A.
Shelukhin, L. A.
Text and Data Mining valid from 2015-04-01