Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy
Crossref DOI link: https://doi.org/10.1134/S1063784219040054
Published Online: 2019-05-15
Published Print: 2019-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bessolov, V. N.
Gushchina, E. V.
Konenkova, E. V.
Konenkov, S. D.
L’vova, T. V.
Panteleev, V. N.
Shcheglov, M. P.
Text and Data Mining valid from 2019-04-01
Version of Record valid from 2019-04-01
Article History
Received: 16 April 2018
First Online: 15 May 2019