Low-Frequency Noise in Light-Emitting Diodes Based on InGaN/GaN Quantum Wells under Electric Actions Accompanied with an Increase in the External Quantum Efficiency
Crossref DOI link: https://doi.org/10.1134/S1063784221010114
Published Online: 2021-02-28
Published Print: 2021-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ivanov, A. M.
Text and Data Mining valid from 2021-01-01
Version of Record valid from 2021-01-01
Article History
Received: 28 December 2018
Revised: 5 July 2020
Accepted: 20 July 2020
First Online: 28 February 2021
CONFLICT OF INTEREST
: The author declares that he has no conflicts of interest.