Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions
Crossref DOI link: https://doi.org/10.1134/S1063785014060091
Published Online: 2014-07-05
Published Print: 2014-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Maiboroda, I. O.
Andreev, A. A.
Perminov, P. A.
Fedorov, Yu. V.
Zanaveskin, M. L.
Text and Data Mining valid from 2014-06-01