On the Influence of Ionic Polarization of Transistor Si-Structures on the Conductivity of p-Type Channels
Crossref DOI link: https://doi.org/10.1134/S1064226919100048
Published Online: 2019-10-17
Published Print: 2019-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Goldman, E. I.
Naryshkina, V. G.
Chucheva, G. V.
Text and Data Mining valid from 2019-10-01
Version of Record valid from 2019-10-01
Article History
Received: 20 November 2018
Revised: 20 November 2018
Accepted: 15 February 2019
First Online: 17 October 2019