Charge characteristics of MOS structure with thermal SiO2 films doped with phosphorus under high-field electron injection
Crossref DOI link: https://doi.org/10.1134/S2075113316020039
Published Online: 2016-05-12
Published Print: 2016-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Andreev, D. V.
Bondarenko, G. G.
Stolyarov, A. A.
Text and Data Mining valid from 2016-03-01