Formation of Oxygen-Containing Centers in Irradiated Silicon Crystals during Annealing in the Temperature Range of 450–700°С
Crossref DOI link: https://doi.org/10.1134/S2075113320050330
Published Online: 2020-10-13
Published Print: 2020-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Talkachova, E. A.
Murin, L. I.
Medvedeva, I. F.
Korshunov, F. P.
Markevich, V. P.
Text and Data Mining valid from 2020-09-01
Version of Record valid from 2020-09-01
Article History
Received: 21 October 2019
Revised: 3 December 2019
Accepted: 4 December 2019
First Online: 13 October 2020