Increasing the Charge Stability of Gate Dielectric Films of MIS Structures by Doping Them with Phosphorus
Crossref DOI link: https://doi.org/10.1134/S2075113321020039
Published Online: 2021-04-20
Published Print: 2021-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Andreev, D. V.
Bondarenko, G. G.
Andreev, V. V.
Stolyarov, A. A.
Text and Data Mining valid from 2021-03-01
Version of Record valid from 2021-03-01
Article History
Received: 3 February 2020
Revised: 18 February 2020
Accepted: 19 February 2020
First Online: 20 April 2021