Impact of the vertical strain on the Schottky barrier height for graphene/AlN heterojunction: a study by the first-principles method
Crossref DOI link: https://doi.org/10.1140/epjb/s10051-020-00010-w
Published Online: 2021-01-21
Published Print: 2021-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Liu, Xuefei http://orcid.org/0000-0003-0154-474X
Zhang, Zhaocai
Lv, Bing
Ding, Zhao
Luo, Zijiang
Text and Data Mining valid from 2021-01-01
Version of Record valid from 2021-01-01
Article History
Received: 23 July 2020
Accepted: 18 November 2020
First Online: 21 January 2021
Compliance with ethical standards
:
: The authors declare no competing financial interests.