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First-principles study of the electronic structure of 2 H-, 3C-, 4 H-, and 6 H-silicon carbide under strain

Crossref DOI link: https://doi.org/10.1140/epjb/s10051-025-00863-z

Published Online: 2025-01-27

Published Print: 2025-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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