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A design and comparative investigation of graded AlxGa1 − x N QB for W-Al0.58GaN/W-Al0.64–0.58 GaN DUV laser diode on AlN substrate

Published Online: 2024-02-12

Published Print: 2024-02

Authors

Rehman, Hameed Ur

Rahman, Naveed Ur

Haq, Inayatul

Wang, Fang

Liu, Yuhuai https://orcid.org/0000-0003-3426-2861
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Text and Data Mining valid from 2024-02-01

Version of Record valid from 2024-02-01
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Article History

Received: 20 October 2023

Accepted: 29 January 2024

First Online: 12 February 2024

Declarations

:

: The author declare no conflicts of interest.

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